Jump to main content
Jump to site search

Issue 26, 2018
Previous Article Next Article

Strain tuned InSe/MoS2 bilayer van der Waals heterostructures for photovoltaics or photocatalysis

Author affiliations

Abstract

The isolation of different two-dimensional materials and the possibility to combine them in vertical stacks have led to new material systems, namely heterostructures based on two-dimensional crystals. By using density functional theory, we found that the InSe/MoS2 bilayer shows an indirect band gap of 0.65 eV with optical absorption over a wide range (300–800 nm) and a preferable separation of photogenerated electron–hole pairs. Moreover, the band gap can be readily tuned by external strain engineering, leading to a transition from the indirect band gap to a direct band gap of 1.55 eV under 7% compressive strain, where there is an enhanced and continuous spectrum. In addition, under a tensile strain of 9%, the bilayer is metallic. All of these properties enable the development of excellent photoelectric devices from the heterostructures with strain engineering.

Graphical abstract: Strain tuned InSe/MoS2 bilayer van der Waals heterostructures for photovoltaics or photocatalysis

Back to tab navigation

Supplementary files

Publication details

The article was received on 11 May 2018, accepted on 25 May 2018 and first published on 26 May 2018


Article type: Paper
DOI: 10.1039/C8CP02997K
Phys. Chem. Chem. Phys., 2018,20, 17574-17582

  •   Request permissions

    Strain tuned InSe/MoS2 bilayer van der Waals heterostructures for photovoltaics or photocatalysis

    J. Zhang, X. Y. Lang, Y. F. Zhu and Q. Jiang, Phys. Chem. Chem. Phys., 2018, 20, 17574
    DOI: 10.1039/C8CP02997K

Search articles by author

Spotlight

Advertisements