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Issue 17, 2018
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Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots

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Abstract

We investigated the effects of surface modification on the defect-related photoluminescence (PL) band in colloidal CdS quantum dots (QDs). A size-selective photoetching process and a surface modification technique with a Cd(OH)2 layer enabled the preparation of size-controlled CdS QDs with high PL efficiency. The Stokes shift of the defect-related PL band before and after the surface modification was ∼1.0 eV and ∼0.63 eV, respectively. This difference in the Stokes shifts suggests that the origin of the defect-related PL band was changed by the surface modification. Analysis by X-ray photoelectron spectroscopy revealed that the surface of the CdS QDs before and after the surface modification was S rich and Cd rich, respectively. These results suggest that Cd-vacancy acceptors and S-vacancy donors affect PL processes in CdS QDs before and after the surface modification, respectively.

Graphical abstract: Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots

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Supplementary files

Article information


Submitted
20 Nov 2017
Accepted
12 Apr 2018
First published
13 Apr 2018

Phys. Chem. Chem. Phys., 2018,20, 11954-11958
Article type
Paper

Surface modification effects on defect-related photoluminescence in colloidal CdS quantum dots

T. Lee, K. Shimura and D. Kim, Phys. Chem. Chem. Phys., 2018, 20, 11954
DOI: 10.1039/C7CP07812A

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