Shock-tube study of the decomposition of tetramethylsilane using gas chromatography and high-repetition-rate time-of-flight mass spectrometry†
The decomposition of tetramethylsilane was studied in shock-tube experiments in a temperature range of 1270–1580 K and pressures ranging from 1.5 to 2.3 bar behind reflected shock waves combining gas chromatography/mass spectrometry (GC/MS) and high-repetition-rate time-of-flight mass spectrometry (HRR-TOF-MS). The main observed products were methane (CH4), ethylene (C2H4), ethane (C2H6), and acetylene (C2H2). In addition, the formation of a solid deposit was observed, which was identified to consist of silicon- and carbon-containing nanoparticles. A kinetics sub-mechanism with 13 silicon species and 20 silicon-containing reactions was developed. It was combined with the USC_MechII mechanism for hydrocarbons, which was able to simulate the experimental observations. The main decomposition channel of TMS is the Si–C bond scission forming methyl (CH3) and trimethylsilyl radicals (Si(CH3)3). The rate constant for TMS decomposition is represented by the Arrhenius expression ktotal[TMS → products] = 5.9 × 1012 exp(−267 kJ mol−1/RT) s−1.
- This article is part of the themed collection: Bunsentagung 2018: Kinetics in the Real World