Jump to main content
Jump to site search

Issue 19, 2017
Previous Article Next Article

Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies

Author affiliations

Abstract

A tin oxide/copper phthalocyanine (CuPc) layer stack was investigated with two complementary photoemission methods. Non-destructive analysis of the electronic properties at the SnOx/CuPc interface was performed applying angle-dependent measurements with X-ray photoelectron spectroscopy (ADXPS) and energy-resolved photoemission yield spectroscopy (PYS). The different components (related to oxide layer and organic overlayer as well as to contamination features) observed in the spectra were assigned to a particular layer by relative depth plot analysis. ADXPS allowed determination of the chemical and electronic structure of the investigated samples. The addition of the organic ultra-thin film to the oxide layer caused a significant increase of the structure's photoemission yield. The combination of ADXPS and PYS allowed determination of the work function of constituent layers, and charge transfer phenomena at the SnOx/CuPc buried interface. An interface dipole of 0.23 eV was detected, assigned to charge transfer across the interface from the oxide layer towards the organic film. The energy level alignment at the SnOx/CuPc interface was determined, and presented in a band-like diagram, together with depth-dependent changes of the core energy levels of the structure's constituents. Finally the role of the oxide's defect-related energy levels in the charge transfer was discussed. The results obtained exhibit significance ranging from investigation, basic understanding and application of such hybrid films. Application of these results in hybrid electronic devices can help understanding and furthering this technology.

Graphical abstract: Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies

Back to tab navigation

Publication details

The article was received on 16 Mar 2017, accepted on 20 Apr 2017 and first published on 26 Apr 2017


Article type: Paper
DOI: 10.1039/C7CP01688C
Phys. Chem. Chem. Phys., 2017,19, 11816-11824
  • Open access: Creative Commons BY license
  •   Request permissions

    Charge transfer quantification in a SnOx/CuPc semiconductor heterostructure: investigation of buried interface energy structure by photoelectron spectroscopies

    M. Krzywiecki, L. Grządziel, A. Sarfraz and A. Erbe, Phys. Chem. Chem. Phys., 2017, 19, 11816
    DOI: 10.1039/C7CP01688C

    This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. Material from this article can be used in other publications provided that the correct acknowledgement is given with the reproduced material.

    Reproduced material should be attributed as follows:

    • For reproduction of material from NJC:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the Centre National de la Recherche Scientifique (CNRS) and the RSC.
    • For reproduction of material from PCCP:
      [Original citation] - Published by the PCCP Owner Societies.
    • For reproduction of material from PPS:
      [Original citation] - Published by The Royal Society of Chemistry (RSC) on behalf of the European Society for Photobiology, the European Photochemistry Association, and RSC.
    • For reproduction of material from all other RSC journals:
      [Original citation] - Published by The Royal Society of Chemistry.

    Information about reproducing material from RSC articles with different licences is available on our Permission Requests page.

Search articles by author

Spotlight

Advertisements