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Issue 48, 2016
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Light-soaking effects and capacitance profiling in Cu(In,Ga)Se2 thin-film solar cells with chemical-bath-deposited ZnS buffer layers

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Abstract

We fabricated Cu(In,Ga)Se2 (CIGS) solar cells with chemical-bath deposited (CBD) ZnS buffer layers with different deposition times. The conversion efficiency and the fill factor of the CIGS solar cells reveal a strong dependence on the deposition time of CBD-ZnS films. In order to understand the detailed relationship between the heterojunction structure and the electronic properties of CIGS solar cells with different deposition times of CBD-ZnS films, capacitance–voltage (C–V) profiling measurements with additional laser illumination were performed. The light-soaking effects on CIGS solar cells with a CBD-ZnS buffer layer were investigated in detail using current density–voltage (JV) and CV measurements with several different lasers with different emission wavelengths. After light-soaking, the conversion efficiency changed significantly and the double diode feature in JV curves disappeared. We explain that the major reason for the improvement of efficiency by light-soaking is due to the fact that negatively charged and highly defective vacancies in the CIGS absorber near the interface of CBD-ZnS/CIGS were formed and became neutral due to carriers generated by ultra-violet absorption in the buffer layer.

Graphical abstract: Light-soaking effects and capacitance profiling in Cu(In,Ga)Se2 thin-film solar cells with chemical-bath-deposited ZnS buffer layers

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Article information


Submitted
31 Jul 2016
Accepted
13 Nov 2016
First published
28 Nov 2016

Phys. Chem. Chem. Phys., 2016,18, 33211-33217
Article type
Paper

Light-soaking effects and capacitance profiling in Cu(In,Ga)Se2 thin-film solar cells with chemical-bath-deposited ZnS buffer layers

H. Yu, W. Lee, J. Wi, D. Cho, W. S. Han, Y. Chung, T. Kim and J. Song, Phys. Chem. Chem. Phys., 2016, 18, 33211
DOI: 10.1039/C6CP05306H

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