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Issue 44, 2015
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Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

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Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated. The current–voltage characteristics of the fabricated devices show different electrical conductance behaviors, such as the write-once read-many-times (WORM) memory effect, the rewritable flash memory effect and insulator behavior, which depend on the content of PBD in the PVP + PBD composites. The OFF and ON states of the WORM and rewritable flash memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.

Graphical abstract: Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

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Article information


Submitted
14 Sep 2015
Accepted
30 Sep 2015
First published
08 Oct 2015

Phys. Chem. Chem. Phys., 2015,17, 29978-29984
Article type
Paper
Author version available

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Y. Sun, F. Miao, R. Li and D. Wen, Phys. Chem. Chem. Phys., 2015, 17, 29978
DOI: 10.1039/C5CP05481H

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