Jump to main content
Jump to site search

Issue 44, 2015
Previous Article Next Article

Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Author affiliations

Abstract

Nonvolatile memory devices, based on electrical conductance tuning in thin films of poly(4-vinyl phenol) (PVP) and 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) composites, are fabricated. The current–voltage characteristics of the fabricated devices show different electrical conductance behaviors, such as the write-once read-many-times (WORM) memory effect, the rewritable flash memory effect and insulator behavior, which depend on the content of PBD in the PVP + PBD composites. The OFF and ON states of the WORM and rewritable flash memory devices are stable under a constant voltage stress or a continuous pulse voltage stress at a read voltage. The memory mechanism is deduced from the modeling of the nature of currents in both states in the devices.

Graphical abstract: Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

Back to tab navigation

Publication details

The article was received on 14 Sep 2015, accepted on 30 Sep 2015 and first published on 08 Oct 2015


Article type: Paper
DOI: 10.1039/C5CP05481H
Author version
available:
Download author version (PDF)
Citation: Phys. Chem. Chem. Phys., 2015,17, 29978-29984

  •   Request permissions

    Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)–oxadiazole composites

    Y. Sun, F. Miao, R. Li and D. Wen, Phys. Chem. Chem. Phys., 2015, 17, 29978
    DOI: 10.1039/C5CP05481H

Search articles by author

Spotlight

Advertisements