Issue 41, 2015

Investigation of field effects in a solid-state nanopore transistor

Abstract

In order to calculate ion currents through solid-state nanopore transistors realistically, we propose a computational model based on the Poisson–Nernst–Plank equation. In the present model, we determine the surface charge density locally on the nanopore by imposing consistency between the ion distribution and the chemical reaction at the surface. The model can consider a non-uniform influence by the gate voltage on the inner surface of the nanopore membrane, which enables us to investigate ion currents depending on the gate geometry such as the thickness and vertical position within the nanopore. We verify the validity of the model by comparing the pH dependence of simulation results with the extant experimental results. We also investigate the transistor behaviour depending on the surface material, pore geometry and gate position. In particular, we propose an optimized system to enhance the on/off ratio of the nanopore transistor.

Graphical abstract: Investigation of field effects in a solid-state nanopore transistor

Supplementary files

Article information

Article type
Paper
Submitted
30 May 2015
Accepted
23 Sep 2015
First published
06 Oct 2015

Phys. Chem. Chem. Phys., 2015,17, 27806-27811

Author version available

Investigation of field effects in a solid-state nanopore transistor

Y. Youn and S. Han, Phys. Chem. Chem. Phys., 2015, 17, 27806 DOI: 10.1039/C5CP03125G

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