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Issue 17, 2015
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Enhanced field emission from in situ synthesized 2D copper sulfide nanoflakes at low temperature by using a novel controllable solvothermal preferred edge growth route

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Abstract

A facile one-pot solvothermal route using the reaction of sputtered copper film and sulfur powder in ethanol solution at a low temperature of 90 °C for 12 hours has been implemented to in situ synthesize 2D hexagonal copper sulfide (CuS) nanoflakes. Their field electron emission (FE) characteristics were investigated and were found to have a close relationship with the copper film’s thickness. The lowest turn on electric field (Eon) was 2.05 V μm−1 and the largest field enhancement factor (β) was 7261 when the copper film's thickness was 160 nm. Furthermore, through a preferred edge growth route, patterned CuS nanoflakes were synthesized with the combined effect from a copper film seed layer and a passivation layer to further improve FE properties with an Eon of 1.65 V μm−1 and a β of 8351. The mechanism of the patterned CuS nanoflake preferred edge growth is reported and discussed for the first time.

Graphical abstract: Enhanced field emission from in situ synthesized 2D copper sulfide nanoflakes at low temperature by using a novel controllable solvothermal preferred edge growth route

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Supplementary files

Article information


Submitted
26 Jan 2015
Accepted
30 Mar 2015
First published
31 Mar 2015

Phys. Chem. Chem. Phys., 2015,17, 11790-11795
Article type
Paper
Author version available

Enhanced field emission from in situ synthesized 2D copper sulfide nanoflakes at low temperature by using a novel controllable solvothermal preferred edge growth route

Z. Song, H. Lei, B. Li, H. Wang, J. Wen, S. Li and G. Fang, Phys. Chem. Chem. Phys., 2015, 17, 11790 DOI: 10.1039/C5CP00493D

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