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Issue 5, 2015
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Performance improvement of multilayer InSe transistors with optimized metal contacts

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Abstract

This work is focused on achieving high performance multilayer InSe field-effect transistors by a systematic experiment study on metal contacts. The high performance can be achieved by choosing an ideal contact metal and adopting a proper thickness of InSe nanosheets. By choosing a proper thickness (33 nm), the performance of multilayer InSe FETs was improved by the following sequence of Al, Ti, Cr and In contacts. The extracted mobility values are 4.7 cm2 V−1 s−1, 27.6 cm2 V−1 s−1, 74 cm2 V−1 s−1 and 162 cm2 V−1 s−1 for Al, Ti, Cr and In, respectively. The on/off ratios are 107–108. The device electronic properties and the interface morphology of the deposition metals/InSe indicate that the contact interface between the metals and InSe plays a significant role in forming low resistance. Our study may pave the way for multilayer InSe applications in nano-electrical and nano-optoelectronic devices.

Graphical abstract: Performance improvement of multilayer InSe transistors with optimized metal contacts

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Publication details

The article was received on 30 Oct 2014, accepted on 09 Dec 2014 and first published on 11 Dec 2014


Article type: Paper
DOI: 10.1039/C4CP04968C
Phys. Chem. Chem. Phys., 2015,17, 3653-3658

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    Performance improvement of multilayer InSe transistors with optimized metal contacts

    W. Feng, X. Zhou, W. Q. Tian, W. Zheng and P. Hu, Phys. Chem. Chem. Phys., 2015, 17, 3653
    DOI: 10.1039/C4CP04968C

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