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Issue 34, 2014
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Interface engineering of a highly sensitive solution processed organic photodiode

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Abstract

We report on tuning of the interfacial properties of a highly sensitive organic photodiode by introducing a buffer layer between the anode and the semiconductor layer. The effects of different buffer layers consisting of a self-assembled monolayer (SAM), PEDOT:PSS, and pentacene on the morphology and crystallinity of the upper-deposited bulk heterojunction semiconductor layer are carefully analyzed combined with electrical analysis. The active layer is controlled to be nearly homogeneous and to have low crystallinity by using a SAM or PEDOT:PSS buffer layers, whereas a highly crystalline morphology is realized by using the pentacene buffer layer. When exposed to light pulses, the external quantum efficiency and thus the photocurrent are slightly higher for the PEDOT:PSS-based photodiode; however the dark current is the lowest for the pentacene-based photodiode. We discuss the origin of the high sensitivity (a detectivity of 1.3 × 1012 Jones and a linear dynamic range of 95 dB) of the pentacene-based photodiode, particularly in terms of the morphology-driven low dark current.

Graphical abstract: Interface engineering of a highly sensitive solution processed organic photodiode

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Publication details

The article was received on 26 May 2014, accepted on 15 Jul 2014 and first published on 17 Jul 2014


Article type: Paper
DOI: 10.1039/C4CP02301C
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Citation: Phys. Chem. Chem. Phys., 2014,16, 18472-18477

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    Interface engineering of a highly sensitive solution processed organic photodiode

    Y. J. Kim, C. E. Park and D. S. Chung, Phys. Chem. Chem. Phys., 2014, 16, 18472
    DOI: 10.1039/C4CP02301C

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