Issue 34, 2014

Physical origins and suppression of Ag dissolution in GeSx-based ECM cells

Abstract

Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.

Graphical abstract: Physical origins and suppression of Ag dissolution in GeSx-based ECM cells

Article information

Article type
Paper
Submitted
23 Apr 2014
Accepted
09 Jul 2014
First published
10 Jul 2014

Phys. Chem. Chem. Phys., 2014,16, 18217-18225

Physical origins and suppression of Ag dissolution in GeSx-based ECM cells

J. van den Hurk, A. Dippel, D. Cho, J. Straquadine, U. Breuer, P. Walter, R. Waser and I. Valov, Phys. Chem. Chem. Phys., 2014, 16, 18217 DOI: 10.1039/C4CP01759E

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