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Issue 31, 2014
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Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

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Abstract

On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

Graphical abstract: Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

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Article information


Submitted
24 Mar 2014
Accepted
27 May 2014
First published
30 May 2014

Phys. Chem. Chem. Phys., 2014,16, 16367-16372
Article type
Communication

Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode

S. H. Hosseini Shokouh, S. R. A. Raza, H. S. Lee and S. Im, Phys. Chem. Chem. Phys., 2014, 16, 16367
DOI: 10.1039/C4CP01266F

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