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Issue 34, 2013
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A universal value of effective annealing time for rapid oxide nucleation and growth under pulsed ultraviolet laser irradiation

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Abstract

The effective annealing times (teff) for nucleating various oxides from an amorphous matrix under nanosecond pulsed laser irradiation have been determined. The oxides, which had perovskite, bixbyite, anatase, and pyrochlore structures, showed similar teff values for crystal nucleation of around 60 ns. This indicates that the effective annealing time is a good universal value for evaluating pulsed laser-induced oxide nucleation. Time-resolved resistance measurements of tin-doped In2O3 thin films under pulsed laser irradiation showed that crystal nucleation and rapid growth proceeded spontaneously with an instantaneous temperature rise.

Graphical abstract: A universal value of effective annealing time for rapid oxide nucleation and growth under pulsed ultraviolet laser irradiation

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Publication details

The article was received on 27 May 2013, accepted on 27 Jun 2013 and first published on 02 Jul 2013


Article type: Paper
DOI: 10.1039/C3CP52224E
Phys. Chem. Chem. Phys., 2013,15, 14384-14389

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    A universal value of effective annealing time for rapid oxide nucleation and growth under pulsed ultraviolet laser irradiation

    T. Nakajima, K. Shinoda and T. Tsuchiya, Phys. Chem. Chem. Phys., 2013, 15, 14384
    DOI: 10.1039/C3CP52224E

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