Issue 20, 2013
From the journal:

Physical Chemistry Chemical Physics

Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence†

Haiping He,*a   Shuili Li,a   Luwei Suna  and  Zhizhen Yea  

* Corresponding authors

a State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
E-mail: hphe@zju.edu.cn
Fax: +86 571 87952625
Tel: +86 571 87953139

Abstract

This work presents positive experimental evidence for the hole traps in ZnO nanorods, which take part in recombination and change the thermal quenching of Cu-related green emission. The evolution of Cu impurity upon annealing, as well as the formation of Cu-related shallow donors with an energy level of ∼0.11 eV are also indicated by temperature-dependent photoluminescence.

Graphical abstract: Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence

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Article information

DOI
https://doi.org/10.1039/C3CP50764E
Article type
Communication
Submitted
20 Feb 2013
Accepted
05 Apr 2013
First published
08 Apr 2013

Phys. Chem. Chem. Phys., 2013,15, 7484-7487

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Hole traps and Cu-related shallow donors in ZnO nanorods revealed by temperature-dependent photoluminescence

H. He, S. Li, L. Sun and Z. Ye, Phys. Chem. Chem. Phys., 2013, 15, 7484 DOI: 10.1039/C3CP50764E

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