Jump to main content
Jump to site search

Issue 27, 2013
Previous Article Next Article

Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor

Author affiliations

Abstract

Semiconducting bismuth sulfide (Bi2S3) nanoplates with unique highly oriented {001} surfaces were prepared on a large scale using a novel organic precursor Bi(DTCA)3 (DTCA = carbazole-9-carbodithioic acid). The as-prepared Bi2S3 nanoplates were dispersed in dimethyl sulfoxide (DMSO) and spin-coated onto an indium tin oxide (ITO) coated glass substrate. With a simple ITO/Bi2S3/Al stacked structure, the fabricated sandwich-like memory device demonstrates dynamic random access memory (DRAM) characteristics with a maximum ON/OFF current ratio up to 106 and a long retention time. It is suggested that the volatile nature of the memory device comes from the Schottky contact between the Bi2S3 nanoplates and the Al electrodes.

Graphical abstract: Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor

Back to tab navigation

Supplementary files

Publication details

The article was received on 15 Feb 2013, accepted on 09 May 2013 and first published on 10 May 2013


Article type: Paper
DOI: 10.1039/C3CP50700A
Citation: Phys. Chem. Chem. Phys., 2013,15, 11554-11558

  •   Request permissions

    Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor

    G. Liu, L. Xu, F. Zhou, Y. Zhang, H. Li, Q. F. Xu and J. M. Lu, Phys. Chem. Chem. Phys., 2013, 15, 11554
    DOI: 10.1039/C3CP50700A

Search articles by author

Spotlight

Advertisements