Issue 4, 2013

Multilayered YSZ/GZO films with greatly enhanced ionic conduction for low temperature solid oxidefuel cells

Abstract

Strain confinement in heterostructured films significantly affects ionic conductivity of the electrolytes for solid oxide fuel cells based on a multi-layered design strategy. Nearly ideal tensile strain can be achieved by a dedicated manipulation of the lattice mismatch between adjacent layers and fine control of the layer thicknesses to minimize the formation of dislocations and thus to achieve optimized ionic conduction. This strategy was demonstrated by a model system of multilayered 8 mol%Y2O3 stabilized ZrO2 (YSZ) with Gd2Zr2O7 (GZO) films, which were epitaxially grown on Al2O3 (0001) substrates by pulsed laser deposition (PLD) with the {111} planes of YSZ/GZO along the Al2O3 [0 1 −1 0] direction. The tensile strain (3%) resulting from the lattice mismatch can be confined in individual YSZ layers with the formation of a coherent, dislocation-free interface upon the manipulation of the layer thickness below a critical value, e.g., down to 5 nm. The strained heterostructure displays a two order-of-magnitude increase in oxide-ion conductivity as compared with bulk YSZ, and a high ionic conductivity of 0.01 S cm−1 at 475 °C can be achieved, five times greater than that of Gd-doped ceria/zirconia. The approach of strain confinement by fine control of lattice mismatch and layer thickness represents a promising strategy in developing advanced electrolytes enabling the miniaturization of solid-state ionic devices that can be operated at low temperatures below 500 °C.

Graphical abstract: Multilayered YSZ/GZO films with greatly enhanced ionic conduction for low temperature solid oxide fuel cells

Supplementary files

Article information

Article type
Paper
Submitted
23 Aug 2012
Accepted
20 Nov 2012
First published
21 Nov 2012

Phys. Chem. Chem. Phys., 2013,15, 1296-1301

Multilayered YSZ/GZO films with greatly enhanced ionic conduction for low temperature solid oxide fuel cells

B. Li, J. Zhang, T. Kaspar, V. Shutthanandan, R. C. Ewing and J. Lian, Phys. Chem. Chem. Phys., 2013, 15, 1296 DOI: 10.1039/C2CP42964K

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