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Issue 33, 2011
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Ce-doped ZnO (CexZn1−xO) becomes an efficient visible-light-sensitive photocatalyst by co-catalyst (Cu2+) grafting

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Abstract

We have fabricated an efficient visible-light-sensitive Cu2+-grafted Ce-doped ZnO photocatalyst (Cu2+–CexZn1−xO) by adopting a metal ion doping and co-catalyst modification. Impurity states were formed below the conduction band (CB) edge in CexZn1−xO, and these impurity states induce the visible-light absorption. CexZn1−xO without a Cu2+-co-catalyst showed negligible visible-light activity due to the low reduction power of electrons in impurity levels. Surprisingly, Cu2+-modification over CexZn1−xO drastically increased its visible-light activity. Excited electrons in impurity states can transfer to the Cu2+-ions on the surface and form Cu2+/Cu+ redox couples, which cause the efficient oxygen reduction through a multi-electron reduction process. One of the striking features of the present study is that the metal doped semiconductors which were inactive due to their impurity states become efficient visible-light photocatalysts upon co-catalyst modification. The successful strategy used here for designing a highly active visible-light photocatalyst would provide numerous opportunities to develop an efficient metal-ion based visible-light photocatalyst.

Graphical abstract: Ce-doped ZnO (CexZn1−xO) becomes an efficient visible-light-sensitive photocatalyst by co-catalyst (Cu2+) grafting

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Article information


Submitted
11 May 2011
Accepted
15 Jun 2011
First published
14 Jul 2011

Phys. Chem. Chem. Phys., 2011,13, 14937-14945
Article type
Paper

Ce-doped ZnO (CexZn1−xO) becomes an efficient visible-light-sensitive photocatalyst by co-catalyst (Cu2+) grafting

S. Anandan and M. Miyauchi, Phys. Chem. Chem. Phys., 2011, 13, 14937
DOI: 10.1039/C1CP21514K

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