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Issue 32, 2011
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Tuning the electrical transport properties of n-type CdS nanowiresvia Ga doping and their nano-optoelectronic applications

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Abstract

Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal–insulator–semiconductor field-effect transistors (MISFETs) were constructed based on the single CdS : Ga NW with high-κSi3N4 dielectrics and top-gate geometries. In contrast to back-gate FETs, the MISFETs revealed a substantial improvement in device performance. Nano-light emitting diodes (nanoLEDs) were fabricated from the CdS : Ga NWs by using a n-NW/p+-Si substrate hybrid device structure. The nanoLEDs showed a bright yellow emission at a low forward bias. It is expected that the Ga-doped CdS NWs with controlled electrical transport properties will have important applications in nano-optoelectronic devices.

Graphical abstract: Tuning the electrical transport properties of n-type CdS nanowiresvia Ga doping and their nano-optoelectronic applications

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Article information


Submitted
08 Apr 2011
Accepted
19 May 2011
First published
28 Jun 2011

Phys. Chem. Chem. Phys., 2011,13, 14663-14667
Article type
Paper

Tuning the electrical transport properties of n-type CdS nanowiresvia Ga doping and their nano-optoelectronic applications

J. Cai, J. Jie, P. Jiang, D. Wu, C. Xie, C. Wu, Z. Wang, Y. Yu, L. Wang, X. Zhang, Q. Peng and Y. Jiang, Phys. Chem. Chem. Phys., 2011, 13, 14663
DOI: 10.1039/C1CP21104H

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