Jump to main content
Jump to site search

Issue 15, 2011
Previous Article Next Article

In situ growth of epitaxial cerium tungstate (100) thin films

Author affiliations

Abstract

The deposition of ceria on a preoxidized W(110) crystal at 870 K has been studied in situ by photoelectron spectroscopy and low-energy electron diffraction. Formation of an epitaxial layer of crystalline cerium tungstate Ce6WO12(100), with the metals in the Ce3+ and W6+ chemical states, has been observed. The interface between the tungsten substrate and the tungstate film consists of WO suboxide. At thicknesses above 0.89 nm, cerium dioxide grows on the surface of Ce6WO12, favoured by the limited diffusion of tungsten from the substrate.

Graphical abstract: In situ growth of epitaxial cerium tungstate (100) thin films

Back to tab navigation

Publication details

The article was received on 31 Dec 2010, accepted on 15 Feb 2011 and first published on 11 Mar 2011


Article type: Paper
DOI: 10.1039/C0CP03012K
Phys. Chem. Chem. Phys., 2011,13, 7083-7089

  •   Request permissions

    In situ growth of epitaxial cerium tungstate (100) thin films

    T. Skála, N. Tsud, M. Á. N. Orti, T. O. Menteş, A. Locatelli, K. C. Prince and V. Matolín, Phys. Chem. Chem. Phys., 2011, 13, 7083
    DOI: 10.1039/C0CP03012K

Search articles by author

Spotlight

Advertisements