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Issue 21, 2011
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Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices

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Abstract

We report on the successful dielectrophoretic trapping and electrical characterization of DNA-coated gold nanoparticles on vertical nanogap devices (VNDs). The nanogap devices with an electrode distance of 13 nm were fabricated from Silicon-on-Insulator (SOI) material using a combination of anisotropic reactive ion etching (RIE), selective wet chemical etching and metal thin-film deposition. Au nanoparticles (diameter 40 nm) coated with a monolayer of dithiolated 8 base pairs double stranded DNA were dielectrophoretically trapped into the nanogap from electrolyte buffer solution at MHz frequencies as verified by scanning and transmission electron microscopy (SEM/TEM) analysis. First electrical transport measurements through the formed DNA–Au–DNA junctions partially revealed an approximately linear current–voltage characteristic with resistance in the range of 2–4 GΩ when measured in solution. Our findings point to the importance of strong covalent bonding to the electrodes in order to observe DNA conductance, both in solution and in the dry state. We propose our setup for novel applications in biosensing, addressing the direct interaction of biomolecular species with DNA in aqueous electrolyte media.

Graphical abstract: Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices

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Publication details

The article was received on 30 Nov 2010, accepted on 22 Feb 2011 and first published on 08 Mar 2011


Article type: Communication
DOI: 10.1039/C0CP02718A
Phys. Chem. Chem. Phys., 2011,13, 9973-9977

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    Dielectrophoretic trapping of DNA-coated gold nanoparticles on silicon based vertical nanogap devices

    S. Strobel, R. A. Sperling, B. Fenk, W. J. Parak and M. Tornow, Phys. Chem. Chem. Phys., 2011, 13, 9973
    DOI: 10.1039/C0CP02718A

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