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Issue 7, 2020
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Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

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Abstract

The utilization of Si substrates to fabricate AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is deemed as an effective way to improve light extraction efficiency with the thin-film flip-chip architecture, which calls for crack-free high-quality high Al-content AlGaN films grown on Si. In this study, we reported the successful growth of a crack-free high-quality 2 μm-thick Al0.5Ga0.5N film grown on planar Si by metal–organic chemical vapor deposition. A smooth surface with a root-mean-square roughness of 1.5 nm was obtained by employing a superlattice transition layer. Double crystal X-ray rocking curves yielded full widths at half maximum of 499 and 648 arcsec for the Al0.5Ga0.5N (0002) and (10[1 with combining macron]2) reflection planes, respectively, revealing a low threading dislocation density of 3.8 × 109 cm−2. This work paves the way for the realization of cost-effective high-performance AlGaN-based DUV LEDs and photodetectors grown on a Si platform.

Graphical abstract: Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

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Article information


Submitted
23 Oct 2019
Accepted
26 Nov 2019
First published
26 Nov 2019

CrystEngComm, 2020,22, 1160-1165
Article type
Paper

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

Y. Huang, J. Liu, X. Sun, X. Zhan, Q. Sun, H. Gao, M. Feng, Y. Zhou, M. Ikeda and H. Yang, CrystEngComm, 2020, 22, 1160
DOI: 10.1039/C9CE01677E

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