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Issue 45, 2019
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Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

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Abstract

Large-area, uniform, and high quality continuous monolayer MoS2 was successfully grown on a SiO2/Si substrate, demonstrated using diverse analytical testing techniques. To achieve reproducible results, we discuss the influence of carrier gas flow on MoS2 growth in detail. Based on the results of the discussion, we present a possible deposition mechanism and growth process of continuous monolayer MoS2. Back-gated field effect transistors (FETs) based on an in situ, as-grown monolayer MoS2 film showed a carrier mobility of ∼9.8 cm2 V−1 s−1 and an Ion/Ioff of ∼3.1 × 106. These values offer insight into the potential applications of monolayer MoS2 in microelectronics and photoelectronics. Our results reveal that the controllable preparation of high quality continuous monolayer MoS2, or other ultrathin 2D materials, can be achieved via optimisation and adjustment of carrier gas flow.

Graphical abstract: Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

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Publication details

The article was received on 02 Aug 2019, accepted on 02 Oct 2019 and first published on 03 Oct 2019


Article type: Paper
DOI: 10.1039/C9CE01209E
CrystEngComm, 2019,21, 6969-6977

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    Controllable growth of continuous monolayer MoS2 by balancing the moles of gaseous precursors via argon flow

    P. Sun, Y. Liu, J. Ma, W. Li, K. Zhang and Y. Yuan, CrystEngComm, 2019, 21, 6969
    DOI: 10.1039/C9CE01209E

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