Microstructure of oxygen-deficient annealing-induced non-polar ZnO films with extremely low electrical resistivity

Abstract

Non-polar ZnO films with extremely low electrical resistivity are obtained through thermal activation under an oxygen-deficient atmosphere. The excitation of donor-type defects confirmed by Hall effect measurement leads to directly observed displacement of Zn atoms. The thermally activated non-polar ZnO/Si (100) heterostructures could have important applications as one-dimensional ZnO nanomaterials in the electronic/opto-electronic field.