Selectable texture in epitaxial ferroelectric BaTiO3 films integrated with silicon
Ferroelectric BaTiO3 films have been epitaxially grown by pulsed laser deposition on buffered Si substrates. We show that the BaTiO3 films' texture is selectable by the appropriate choice of Si wafer orientation and buffer layers. BaTiO3 films having (00l), (l0l) or (l0l)/(l00) texture present a very flat surface, low current leakage, and sizeable ferroelectric polarization. The films, integrated with silicon, offer opportunities to exploit the anisotropic optical and dielectric properties of ferroelectric BaTiO3.