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Issue 41, 2017
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ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

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Abstract

n-ZnO nanorods/p-Si heterojunctions with and without an AlN buffer layer were grown. The ultraviolet luminescence of the ZnO nanorods was greatly enhanced through introducing an AlN buffer layer, and this can be attributed to an improvement in the ZnO nanorod crystallinity, and confinement effects from the AlN potential barrier layer.

Graphical abstract: ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

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Article information


Submitted
15 Apr 2017
Accepted
25 Sep 2017
First published
25 Sep 2017

CrystEngComm, 2017,19, 6085-6088
Article type
Communication

ZnO nanorod arrays grown on an AlN buffer layer and their enhanced ultraviolet emission

A. Ali, D. Wang, J. Wang, S. Jiao, F. Guo, Y. Zhang, S. Gao, S. Ni, C. Luan, D. Wang and L. Zhao, CrystEngComm, 2017, 19, 6085
DOI: 10.1039/C7CE00722A

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