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Issue 36, 2014
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Single crystal Gd2O3 epitaxially on GaAs(111)A

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Gd2O3 films 2 and 6 nm thick, electron-beam evaporated from a compact powder target, were deposited on freshly molecular beam epitaxy (MBE) grown epi-GaAs(111)A in a multi-chamber MBE system. The oxide films are epitaxial with the underlying GaAs, as studied by in situ reflective high energy electron diffraction and high-resolution X-ray diffraction using synchrotron radiation. The films undergo a structure phase transformation from hexagonal to monoclinic when the film thickness increases from 2 to 6 nm; the 2 nm oxide has H-Gd2O3(0001)[10[1 with combining macron]0]‖GaAs(111)[4[2 with combining macron][2 with combining macron]] orientation relationship and the 6 nm film follows M-Gd2O3([2 with combining macron]01)[102]‖GaAs(111)<4[2 with combining macron][2 with combining macron]> with 3 rotational variants anchored by the 3-fold symmetric substrate. Here, H and M denote the hexagonal and monoclinic phases, respectively.

Graphical abstract: Single crystal Gd2O3 epitaxially on GaAs(111)A

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Publication details

The article was received on 08 Apr 2014, accepted on 17 Jun 2014 and first published on 17 Jun 2014

Article type: Paper
DOI: 10.1039/C4CE00734D
CrystEngComm, 2014,16, 8457-8462

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    Single crystal Gd2O3 epitaxially on GaAs(111)A

    T. Chiang, S. Wu, T. Huang, C. Hsu, J. Kwo and M. Hong, CrystEngComm, 2014, 16, 8457
    DOI: 10.1039/C4CE00734D

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