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Issue 20, 2014
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Epitaxial growth of high quality AlN films on metallic aluminum substrates

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Abstract

AlN (0001) epitaxial films have been grown on Al (111) substrates with an in-plane epitaxial relationship of AlN[11[2 with combining macron]0]//Al[1[1 with combining macron]0] by pulsed laser deposition. The as-grown AlN films grown at 450 °C exhibited a very smooth and flat surface with a surface root-mean-square roughness less than 1.1 nm. There is no interfacial layer existing between AlN films and Al substrates, indicating an abrupt interface. The as-grown ~302 nm thick AlN films are almost fully relaxed only with an in-plane compressive strain of 0.16%. With the increase in growth temperature, the interfacial layer thickness increases, resulting in the degradation in the crystalline quality of the as-grown AlN films. These AlN films are of great interest for the commercial development of AlN-based devices.

Graphical abstract: Epitaxial growth of high quality AlN films on metallic aluminum substrates

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Article information


Submitted
10 Jan 2014
Accepted
04 Mar 2014
First published
04 Mar 2014

CrystEngComm, 2014,16, 4100-4107
Article type
Communication

Epitaxial growth of high quality AlN films on metallic aluminum substrates

W. Wang, W. Yang, Z. Liu, Y. Lin, S. Zhou, H. Qian, F. Gao and G. Li, CrystEngComm, 2014, 16, 4100
DOI: 10.1039/C4CE00064A

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