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Issue 21, 2014
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Defect reduction in semipolar {10[1 with combining macron][3 with combining macron]} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth

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Abstract

A method to obtain high quality semipolar {10[1 with combining macron][3 with combining macron]} GaN grown on m-plane sapphire is presented. This method is similar to two-step nanoepitaxial lateral overgrowth (2S-NELOG) by combining a TiN interlayer and self-assembled SiO2 nanospheres. For the 2S-NELOG semi-GaN, the root-mean-square (RMS) roughness is 1.8 nm with a scan area of 5 × 5 μm2. The reduction of the defect density is demonstrated using high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The full widths at half maximum (FWHMs) of the on-axis X-ray rocking curves (XRCs) are 381 and 524 arcsec, respectively rocking toward the [30[3 with combining macron][2 with combining macron]] direction and the [1[2 with combining macron]10] direction. The anisotropy of the mosaic is lower compared to planar and TiN semi-GaN. In addition, Raman analyses also show the partial relaxation of the stress in the 2S-NELOG semi-GaN.

Graphical abstract: Defect reduction in semipolar {10 [[1 with combining macron]]  [[3 with combining macron]] } GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth

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Article information


Submitted
31 Dec 2013
Accepted
24 Feb 2014
First published
03 Mar 2014

CrystEngComm, 2014,16, 4562-4567
Article type
Paper
Author version available

Defect reduction in semipolar {10[1 with combining macron][3 with combining macron]} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth

J. Yang, T. Wei, Z. Huo, Y. Zhang, Q. Hu, X. Wei, B. Sun, R. Duan and J. Wang, CrystEngComm, 2014, 16, 4562 DOI: 10.1039/C3CE42663G

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