Epitaxial lateral overgrowth on the air void embedded SiO2 mask for InGaN light-emitting diodes

Abstract

We fabricated In_xGa_1−xN multiple quantum well (MQW) light-emitting diodes (LEDs) on an air void embedded SiO₂ mask using a simple process (silver (Ag) deposition, SiO₂ capping, and high-temperature annealing). Ag was volatilized in the MOCVD process and formed an air void, as revealed by energy dispersive X-ray spectroscopy images. The light output power (at 20 mA) of the LED using epitaxial lateral overgrowth on the SiO₂ mask (47.8%) and LED with the air void embedded SiO₂ mask (96.8%) are enhanced compared to conventional LEDs. From reflectance measurements, the enhancement of LEDs with an air void embedded SiO₂ mask could be mainly explained by the increased high incident angle specular reflectance.