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Issue 19, 2013
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Low pressure plasma assisted silicon nanowire growth from self organised tin catalyst particles

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Abstract

We present results on the growth of silicon nanowires from self organised tin catalyst particles by electron cyclotron resonance chemical vapour deposition (ECRCVD), a technique utilising process pressures in the mTorr range with the allied long mean free path. The formation of tin catalyst particles from layers with initial thicknesses of 6, 12 and 24 nm is studied along with nanowire growth parameters of silane partial pressure, microwave power and process pressure. Preliminary observations on the effects on wire growth of a radio frequency (RF) generated direct current (DC) sample self bias are also reported. Observations are made on the mechanisms influencing nanowire growth along with catalyst stability.

Graphical abstract: Low pressure plasma assisted silicon nanowire growth from self organised tin catalyst particles

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Article information


Submitted
08 Jan 2013
Accepted
27 Mar 2013
First published
28 Mar 2013

CrystEngComm, 2013,15, 3808-3815
Article type
Paper

Low pressure plasma assisted silicon nanowire growth from self organised tin catalyst particles

J. Ball, L. Bowen, B. G. Mendis and H. S. Reehal, CrystEngComm, 2013, 15, 3808
DOI: 10.1039/C3CE00036B

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