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Issue 21, 2013
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Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

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Abstract

The formation mechanism of experimentally observed epitaxial morphologies on (000 ± 1) polar surfaces of ZnO microwire was studied by density functional theory simulation of atomic step models on both polar surfaces. In situ observations by environmental scanning electron microscopy were employed to control and detect the morphology evolutions during the epitaxial growth process. Edge formation energies for representative step models were calculated as a function of Zn chemical potential. The energetically favorable step structures were determined under different conditions, which could be related to certain surface morphologies regarding the aspects of crystallography and growth kinetics. Our experiments can be well explained by theoretical simulations.

Graphical abstract: Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

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Publication details

The article was received on 27 Sep 2012, accepted on 11 Dec 2012 and first published on 12 Dec 2012


Article type: Paper
DOI: 10.1039/C2CE26567B
CrystEngComm, 2013,15, 4249-4254

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    Formation mechanism of homo-epitaxial morphology on ZnO (000 ± 1) polar surfaces

    R. Zhu, Q. Zhao, J. Xu, L. Chen, Y. Leprince-Wang and D. Yu, CrystEngComm, 2013, 15, 4249
    DOI: 10.1039/C2CE26567B

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