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Issue 9, 2013
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Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

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Abstract

P-type polycrystalline Si film on a foreign substrate can be fabricated at temperatures lower than 773 K by an aluminium-induced crystallisation process. However, the ultimate carrier concentration of the Si film is limited to approximately 3 × 1018 cm−3 because of the low solid solubility of Al in Si at temperatures below 773 K. In this study, a process called B-AIC is developed in which boron is co-doped with Al to increase the carrier concentration in Si films to ∼1019 cm−3 at temperatures as low as 673 K. The carrier concentration can be tuned by the initial thickness of a-Si layer in the B-AIC process. Beside the fabrication of polycrystalline Si film on glass, the epitaxial growth of this heavily doped p++-Si film can also be realized on a single crystalline Si wafer via a solid phase epitaxy mechanism.

Graphical abstract: Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

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Supplementary files

Article information


Submitted
26 Sep 2012
Accepted
02 Jan 2013
First published
04 Jan 2013

CrystEngComm, 2013,15, 1680-1684
Article type
Communication

Epitaxial growth of heavily boron-doped Si by Al(B)-induced crystallisation at low temperature for back surface field manufacturing

S. Wei, H. Lin, S. Yu, C. Hsieh, S. Tsai, W. Sun, T. Lin, C. Tsai and F. Chen, CrystEngComm, 2013, 15, 1680 DOI: 10.1039/C2CE26563J

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