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Issue 9, 2012
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A unique strategy for improving top contact in Si/ZnO hierarchical nanoheterostructure photodetectors

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Abstract

Three-dimensional p-Si nanopillar/n-ZnO nanowire-array hierarchical nanoheterostructure photodetectors were achieved via a highly accessible and controllable fabrication process. By introducing PMMA to provide a flat, continuous and uniform surface, unique high transparency, low resistance top contact has been fabricated. The improved front electrode showed very small sheet resistivity of 0.002 Ω cm, two orders of magnitude lower than that of direct deposition of ITO onto ZnO (0.58 Ω cm).

Graphical abstract: A unique strategy for improving top contact in Si/ZnO hierarchical nanoheterostructure photodetectors

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Article information


Submitted
21 Dec 2011
Accepted
09 Feb 2012
First published
13 Feb 2012

CrystEngComm, 2012,14, 3015-3018
Article type
Communication

A unique strategy for improving top contact in Si/ZnO hierarchical nanoheterostructure photodetectors

W. Wang, Q. Zhao, J. Xu and D. Yu, CrystEngComm, 2012, 14, 3015
DOI: 10.1039/C2CE06715C

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