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Issue 5, 2012
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The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3 buffer layer

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Abstract

The structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by pulsed laser deposition on a Si(111) substrate buffered with a thin layer of γ-Al2O3 were investigated by X-ray diffraction, transmission electron microscopy, photoluminescence (PL) and Hall measurements. Detailed structural investigation showed that the dominant structural defects in the ZnO films are threading dislocations (TDs). Experimental results manifest the edge- and screw-type of TDs influence the optical and electric properties differently; the intensity ratio between the PL yellow-green band to near band edge emission and the carrier concentration are affected mainly by the edge TD, and the FWHM of the near band edge emission is dominantly influenced by the screw TD.

Graphical abstract: The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3 buffer layer

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Publication details

The article was received on 17 Sep 2011, accepted on 02 Dec 2011 and first published on 20 Dec 2011


Article type: Paper
DOI: 10.1039/C2CE06218F
Citation: CrystEngComm, 2012,14, 1665-1671
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    The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3 buffer layer

    W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong and J. Kwo, CrystEngComm, 2012, 14, 1665
    DOI: 10.1039/C2CE06218F

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