The influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a γ-Al2O3buffer layer
Abstract
The structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by
Maintenance work is planned from 09:00 BST to 12:00 BST on Saturday 28th September 2024.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Division of Scientific Research, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
E-mail:
chsu@nsrrc.org.tw, wfhsieh@mail.nctu.edu.tw
b Department of Photonics & Institute of Electro-Optical Science and Engineering, National Cheng Kung University, Tainan, Taiwan
c Department of Photonics and Institute of Electro-Optical Engineering National Chiao Tung University, Hsinchu, Taiwan
d Department of Materials Science & Engineering, National Tsing Hua University, Hsinchu, Taiwan
e Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
f Department of Physics, National Tsing Hua University, Hsinchu, Taiwan
The structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by
W.-R. Liu, B. H. Lin, S. Yang, C. C. Kuo, Y.-H. Li, C.-H. Hsu, W. F. Hsieh, W. C. Lee, M. Hong and J. Kwo, CrystEngComm, 2012, 14, 1665 DOI: 10.1039/C2CE06218F
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content