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Issue 1, 2012
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Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures

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Abstract

Single-crystalline Ge nanowires have been synthesized on Au-coated Si substrates through a thermal evaporation, condensation method and vapor–liquid–solid mechanism. The [111] growth direction of the Ge nanowires was analyzed using HRTEM and fast Fourier transform diffraction patterns. Global back-gated Ge nanowire field-effect transistors (FETs) on the Si3N4 dielectrics were fabricated and studied, showing p-type behavior and a field effect hole mobility of 44.3 cm2 V−1 s−1. The Ge channel length could be well controlled through the annealing process. After a rapid thermal annealing (RTA) process, Ni2Ge/Ge/Ni2Ge nano-heterostructures were formed. The electrical transport properties were effectively improved by the heterojunction rather than the metal contact. The epitaxial relationship between Ge and orthorhombic Ni2Ge was Ge[110]//Ni2Ge[110] and Ge(-11-1)//Ni2Ge(1-1-2). From electrical transport properties, the measured resistivity of the Ge nanowires was much lower than intrinsic bulk Ge material. A room temperature photoluminescence spectrum of the Ge nanowires possessed a broad blue emission with a peak at 462 nm in wavelength, which was attributed to the oxide-related defect states. Due to the existence of the defects, a Ge nanowire FET was able to detect visible light and serve as a nanowire photodetector.

Graphical abstract: Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures

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Publication details

The article was received on 28 Aug 2011, accepted on 07 Oct 2011 and first published on 02 Nov 2011


Article type: Communication
DOI: 10.1039/C1CE06107K
CrystEngComm, 2012,14, 53-58

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    Growth and properties of single-crystalline Ge nanowires and germanide/Ge nano-heterostructures

    C. Tsai, S. Yu, C. Hsin, C. Huang, C. Wang and W. Wu, CrystEngComm, 2012, 14, 53
    DOI: 10.1039/C1CE06107K

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