Issue 11, 2010

Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

Abstract

In sharp contrast to the general belief in the round shape of In droplets, we report various configurations of In nanostructures. Various configurations of self-assembled In nanostructures are demonstrated by droplet epitaxy on GaAs (100) using molecular beam epitaxy. Square, rectangle, pentagonal geometries and elongated rod-like configurations are realized on GaAs (100). The formation of facets is clearly observed on the top and side of the In nanostructures. Co-existence of both round and square shapes of In nanostructures is captured, which shows the sharp transition between the two.

Graphical abstract: Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

Article information

Article type
Communication
Submitted
01 Apr 2010
Accepted
20 May 2010
First published
25 Jun 2010

CrystEngComm, 2010,12, 3404-3408

Various configurations of In nanostructures on GaAs (100) by droplet epitaxy

J. Lee, Z. Wang, Y. Hirono, E. Kim, N. Kim, S. Park, C. Wang and G. J. Salamo, CrystEngComm, 2010, 12, 3404 DOI: 10.1039/C0CE00057D

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