Jump to main content
Jump to site search

Issue 11, 2010
Previous Article Next Article

The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal–organic chemical vapor deposition system

Author affiliations

Abstract

Vertically well-aligned InN nanorods have been synthesized successfully by introducing diethylzinc (DEZn) into metal–organic chemical vapor deposition system. X-Ray diffraction and transmission electron microscopy measurements show that InN nanorods are single-crystalline and Zn-doped. In-depth studies indicate that DEZn inhibits the InN growth along m-plane and further leads to the self-formation indium droplets acting as catalyst. The whole growth process of InN nanorods is a combined result of the restriction effect from DEZn and catalytic effect from indium droplets. Also, the temperature effect on the growth has been studied intensively. Our research on the controlled growth of high-quality InN nanorods is very important for InN-based optoelectronic and electronic nano-devices.

Graphical abstract: The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal–organic chemical vapor deposition system

Back to tab navigation

Article information


Submitted
29 Mar 2010
Accepted
26 May 2010
First published
28 Jul 2010

CrystEngComm, 2010,12, 3936-3941
Article type
Paper

The role of zinc dopant and the temperature effect on the controlled growth of InN nanorods in metal–organic chemical vapor deposition system

H. Song, Y. Guo, A. Yang, H. Wei, X. Xu, J. Liu, S. Yang, X. Liu, Q. Zhu and Z. Wang, CrystEngComm, 2010, 12, 3936
DOI: 10.1039/C0CE00046A

Social activity

Search articles by author

Spotlight

Advertisements