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Issue 10, 2010
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Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure†

Zhengliang Sun,ab   Shengcong Liufu,*a   Xihong Chena  and  Lidong Chena  
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* Corresponding authors

a CAS Key laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Science, 1295 Dingxi Road, Shanghai, PR China
E-mail: scliufu@hotmail.com
Fax: +86 2152413122
Tel: +86 2152412522

b Graduate School of the Chinese Academy of Science, 19 Yuquan Road, Beijing, PR China

Abstract

A new nanostructure of double-layer thin films (DLTFs) has been introduced to Bi2Se3 as thermoelectric films through a facile one-step and low-temperature solution route. The Bi2Se3 DLTFs consist of a (001) orientational inner layer and a (110) orientational outer layer with controllable thicknesses. The controllable release of the precursor ion is critical to adjust the double-layer nanostructures. The maximum power factor of the Bi2Se3 DLTFs reaches 100 μW m−1 K−1, which is larger by 79% than the value for a single layer Bi2Se3 film.

Graphical abstract: Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure

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Article information

https://doi.org/10.1039/C002523B
Submitted
10 Feb 2010
Accepted
22 Apr 2010
First published
27 May 2010
CrystEngComm, 2010,12, 2672-2674
Article type
Communication
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Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure

Z. Sun, S. Liufu, X. Chen and L. Chen, CrystEngComm, 2010, 12, 2672
DOI: 10.1039/C002523B

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