Jump to main content
Jump to site search

Issue 10, 2010
Previous Article Next Article

Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure

Author affiliations

Abstract

A new nanostructure of double-layer thin films (DLTFs) has been introduced to Bi2Se3 as thermoelectric films through a facile one-step and low-temperature solution route. The Bi2Se3 DLTFs consist of a (001) orientational inner layer and a (110) orientational outer layer with controllable thicknesses. The controllable release of the precursor ion is critical to adjust the double-layer nanostructures. The maximum power factor of the Bi2Se3 DLTFs reaches 100 μW m−1 K−1, which is larger by 79% than the value for a single layer Bi2Se3 film.

Graphical abstract: Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure

Back to tab navigation

Supplementary files

Article information


Submitted
10 Feb 2010
Accepted
22 Apr 2010
First published
27 May 2010

CrystEngComm, 2010,12, 2672-2674
Article type
Communication

Enhancing thermoelectric performance of bismuth selenide films by constructing a double-layer nanostructure

Z. Sun, S. Liufu, X. Chen and L. Chen, CrystEngComm, 2010, 12, 2672
DOI: 10.1039/C002523B

Social activity

Search articles by author

Spotlight

Advertisements