ReGaGe2: an intermetallic compound with semiconducting properties and localized bonding

Maxim S. Likhanov; Roman A. Khalaniya; Valeriy Yu. Verchenko; Andrei A. Gippius; Sergei V. Zhurenko; Alexey V. Tkachev; Dina I. Fazlizhanova; Alexey N. Kuznetsov; Andrei V. Shevelkov

doi:10.1039/C9CC02563D

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ReGaGe₂: an intermetallic compound with semiconducting properties and localized bonding†

Maxim S. Likhanov,

^a Roman A. Khalaniya,^a Valeriy Yu. Verchenko,

^ab Andrei A. Gippius,^cd Sergei V. Zhurenko,^cd Alexey V. Tkachev,^d Dina I. Fazlizhanova,^c Alexey N. Kuznetsov^ae and Andrei V. Shevelkov

*^a

Author affiliations

* Corresponding authors

^a Department of Chemistry, Lomonosov Moscow State University, Moscow 119991, Russia
E-mail: shev@inorg.chem.msu.ru

^b National Institute for Chemical Physics and Biophysics, 12618 Tallinn, Estonia

^c Department of Physics, Lomonosov Moscow State University, Moscow 119991, Russia

^d P. N. Lebedev Physics Institute RAS, Moscow 119991, Russia

^e N. S. Kurnakov Institute of General and Inorganic Chemistry RAS, Moscow 119991, Russia

Abstract

ReGaGe₂ is a new member of the family of intermetallic compounds with non-metallic properties. It displays highly localized covalent bonding patterns. Its electronic structure is governed by mixing of Re d orbitals with the s and p orbitals of Ga and Ge and features the Fermi level falling into the opened band gap, ensuring experimentally confirmed semiconducting properties.

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Article information

DOI: https://doi.org/10.1039/C9CC02563D
Article type: Communication
Submitted: 02 Apr 2019
Accepted: 18 Apr 2019
First published: 22 Apr 2019

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Chem. Commun., 2019,55, 5821-5824

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ReGaGe₂: an intermetallic compound with semiconducting properties and localized bonding

M. S. Likhanov, R. A. Khalaniya, V. Yu. Verchenko, A. A. Gippius, S. V. Zhurenko, A. V. Tkachev, D. I. Fazlizhanova, A. N. Kuznetsov and A. V. Shevelkov, Chem. Commun., 2019, 55, 5821 DOI: 10.1039/C9CC02563D

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