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Issue 42, 2016
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Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

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Abstract

Flexible multi-channel Si nanowire (NW) field-effect transistors (FETs) were investigated to determine the effect of the number of Si NWs. The Langmuir–Blodgett method was applied for the formation of well-aligned Si NW monolayers, and an ion-gel with a high dielectric constant was used as a gate insulator in a top-gate TFT structure to secure flexibility. Like typical nanoelectronic devices, the drain current changed with the number of Si NWs. However, unlike previous reports, the mobility of the multi-channel Si NW FETs increased from 42.8 to 124.6 cm2 V−1 s−1 as the number of Si NWs was increased from 1 to 58. To verify the feasibility of our approach, the electrical performance of the TFTs fabricated on a flexible polyimide (PI) substrate was analyzed in respect of the bending strain (0.08–1.51%) and bending cycle (up to 12 000 cycles). As the number of Si NWs was increased, the trade-off between electrical and mechanical properties during bending tests was confirmed, and the appropriate number of Si NWs was optimized for a flexible FET with excellent performance.

Graphical abstract: Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

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Publication details

The article was received on 29 Feb 2016, accepted on 21 Apr 2016 and first published on 21 Apr 2016


Article type: Communication
DOI: 10.1039/C6CC01793B
Chem. Commun., 2016,52, 6938-6941

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    Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

    D. H. Kim, S. J. Lee, S. H. Lee and J. Myoung, Chem. Commun., 2016, 52, 6938
    DOI: 10.1039/C6CC01793B

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