Issue 42, 2016

Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

Abstract

Flexible multi-channel Si nanowire (NW) field-effect transistors (FETs) were investigated to determine the effect of the number of Si NWs. The Langmuir–Blodgett method was applied for the formation of well-aligned Si NW monolayers, and an ion-gel with a high dielectric constant was used as a gate insulator in a top-gate TFT structure to secure flexibility. Like typical nanoelectronic devices, the drain current changed with the number of Si NWs. However, unlike previous reports, the mobility of the multi-channel Si NW FETs increased from 42.8 to 124.6 cm2 V−1 s−1 as the number of Si NWs was increased from 1 to 58. To verify the feasibility of our approach, the electrical performance of the TFTs fabricated on a flexible polyimide (PI) substrate was analyzed in respect of the bending strain (0.08–1.51%) and bending cycle (up to 12 000 cycles). As the number of Si NWs was increased, the trade-off between electrical and mechanical properties during bending tests was confirmed, and the appropriate number of Si NWs was optimized for a flexible FET with excellent performance.

Graphical abstract: Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

Supplementary files

Article information

Article type
Communication
Submitted
29 Feb 2016
Accepted
21 Apr 2016
First published
21 Apr 2016

Chem. Commun., 2016,52, 6938-6941

Electrical properties of flexible multi-channel Si nanowire field-effect transistors depending on the number of Si nanowires

D. H. Kim, S. J. Lee, S. H. Lee and J. Myoung, Chem. Commun., 2016, 52, 6938 DOI: 10.1039/C6CC01793B

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