Issue 33, 2016
From the journal:

Chemical Communications

Creation of hollow SAPO-34 single crystals via alkaline or acid etching†

Yuyan Qiao,ab   Miao Yang,a   Beibei Gao,ab   Linying Wang,a   Peng Tian,*a   Shutao Xua  and  Zhongmin Liu*a  

* Corresponding authors

a National Engineering Laboratory for Methanol to Olefins, Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, P. R. China
E-mail: tianpeng@dicp.ac.cn, liuzm@dicp.ac.cn

b University of Chinese Academy of Sciences, Beijing 100049, P. R. China

Abstract

Hollow SAPO-34 crystals are created via selective etching of their precursor under controlled alkaline or acid conditions. The abundant/interconnected Si–O–Al domains and Si–O–Si networks at the outer layer of SAPO-34 crystals are revealed to be decisive factors for the base and acid treatments respectively to achieve a well-preserved hollow structure.

Graphical abstract: Creation of hollow SAPO-34 single crystals via alkaline or acid etching

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Article information

DOI
https://doi.org/10.1039/C5CC10070D
Article type
Communication
Submitted
07 Dec 2015
Accepted
23 Mar 2016
First published
23 Mar 2016

Chem. Commun., 2016,52, 5718-5721

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Creation of hollow SAPO-34 single crystals via alkaline or acid etching

Y. Qiao, M. Yang, B. Gao, L. Wang, P. Tian, S. Xu and Z. Liu, Chem. Commun., 2016, 52, 5718 DOI: 10.1039/C5CC10070D

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