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Issue 28, 2016
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Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

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Abstract

Bulk metals and metal chalcogenides are found to dissolve in primary amine–dithiol solvent mixtures at ambient conditions. Thin-films of CuS, SnS, ZnS, Cu2Sn(Sx,Se1−x)3, and Cu2ZnSn(SxSe1−x)4 (0 ≤ x ≤ 1) were deposited using the as-dissolved solutions. Cu2ZnSn(SxSe1−x)4 solar cells with efficiencies of 6.84% and 7.02% under AM1.5 illumination were fabricated from two example solution precursors, respectively.

Graphical abstract: Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

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Publication details

The article was received on 01 Dec 2015, accepted on 04 Mar 2016 and first published on 15 Mar 2016


Article type: Communication
DOI: 10.1039/C5CC09915C
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Citation: Chem. Commun., 2016,52, 5007-5010

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    Metal–metal chalcogenide molecular precursors to binary, ternary, and quaternary metal chalcogenide thin films for electronic devices

    R. Zhang, S. Cho, D. G. Lim, X. Hu, E. A. Stach, C. A. Handwerker and R. Agrawal, Chem. Commun., 2016, 52, 5007
    DOI: 10.1039/C5CC09915C

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