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Issue 54, 2015
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Defect-enhanced void filling and novel filled phases of open-structure skutterudites

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Abstract

We report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.

Graphical abstract: Defect-enhanced void filling and novel filled phases of open-structure skutterudites

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Publication details

The article was received on 15 Apr 2015, accepted on 14 May 2015 and first published on 14 May 2015


Article type: Communication
DOI: 10.1039/C5CC03111G
Citation: Chem. Commun., 2015,51, 10823-10826

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    Defect-enhanced void filling and novel filled phases of open-structure skutterudites

    L. Xi, Y. Qiu, X. Shi, W. Zhang, L. Chen, D. J. Singh and J. Yang, Chem. Commun., 2015, 51, 10823
    DOI: 10.1039/C5CC03111G

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