Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

Robert Ionescu; Isaac Ruiz; Zach Favors; Brennan Campbell; Mahesh R. Neupane; Darshana Wickramaratne; Kazi Ahmed; Chueh Liu; Narek Abrahamian; Roger K. Lake; Mihri Ozkan; Cengiz S. Ozkan

doi:10.1039/C5CC02837J

Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

Robert Ionescu,^a Isaac Ruiz,^b Zach Favors,^a Brennan Campbell,^a Mahesh R. Neupane,^bc Darshana Wickramaratne,^b Kazi Ahmed,^b Chueh Liu,^a Narek Abrahamian,^a Roger K. Lake,^b Mihri Ozkan^ab and Cengiz S. Ozkan*^a

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* Corresponding authors

^a Materials Science and Engineering Program, University of California, Riverside, CA 92521, USA
E-mail: cozkan@engr.ucr.edu

^b Department of Electrical and Computer Engineering, University of California, Riverside, CA 92521, USA

^c U.S. Army Research Laboratory, RDRL-WMM-G, Aberdeen Proving Ground, Maryland 21005, USA

Abstract

Here, we report the first demonstration of atomically thin vertically stacked MoS₂/WS₂ heterostructures, achieved via a two-step chemical vapour deposition (CVD) growth process. Highly ordered stacking of heterostructure domains and patterned defects have been observed. Computations based on first principles have been performed to understand observed enhanced photoluminescence of the heterostructure.

Chemical Communications

Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

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Two step growth phenomena of molybdenum disulfide–tungsten disulfide heterostructures

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