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Issue 44, 2015
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Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

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Abstract

Here, we propose an effective method for improving the resistive switching characteristics of solution-processed gallium-doped zinc oxide (GaZnOx) resistive random access memory (RRAM) devices using hydrogen peroxide. Our results imply that solution processed GaZnOx RRAM devices could be one of the candidates for the development of low cost RRAM.

Graphical abstract: Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

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Publication details

The article was received on 21 Dec 2014, accepted on 23 Apr 2015 and first published on 27 Apr 2015


Article type: Communication
DOI: 10.1039/C4CC10209F
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Citation: Chem. Commun., 2015,51, 9173-9176
  • Open access: Creative Commons BY-NC license
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    Highly reliable switching via phase transition using hydrogen peroxide in homogeneous and multi-layered GaZnOx-based resistive random access memory devices

    S. P. Park, D. H. Yoon, Y. J. Tak, H. Lee and H. J. Kim, Chem. Commun., 2015, 51, 9173
    DOI: 10.1039/C4CC10209F

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