Issue 16, 2015
From the journal:

Chemical Communications

Quantitative analysis of photons' decaying pathways in Si nanowire arrays for highly efficient photoelectrochemical solar hydrogen generation†

Chunyang Duan,a   Hui Wang,*a   Bingchang Zhang,a   Fan Li,a   Xuemei Oua  and  Xiaohong Zhang*ab  

* Corresponding authors

a Nano-organic Photoelectronic Laboratory and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
E-mail: wanghui@mail.ipc.ac.cn
Fax: +86-10-64879375
Tel: +86-10-82543510

b Functional Nano & Soft Materials Laboratory (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices and Collaborative Innovation Center of Suzhou Nano Science and Technology Soochow University, Suzhou, Jiangsu 215123, P. R. China
E-mail: xhzhang@mail.ipc.ac.cn

Abstract

We quantitatively investigated excitons' decaying pathways of photon-excited SiNW arrays to determine the reason for their low performances. It is demonstrated that excitons decay through both carriers' separation and energy transfer due to Si's indirect-band-gap feature, and these two pathways could be regulated through surface modification.

Graphical abstract: Quantitative analysis of photons' decaying pathways in Si nanowire arrays for highly efficient photoelectrochemical solar hydrogen generation

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Article information

DOI
https://doi.org/10.1039/C4CC09586C
Article type
Communication
Submitted
01 Dec 2014
Accepted
15 Jan 2015
First published
16 Jan 2015

Chem. Commun., 2015,51, 3383-3386

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Quantitative analysis of photons' decaying pathways in Si nanowire arrays for highly efficient photoelectrochemical solar hydrogen generation

C. Duan, H. Wang, B. Zhang, F. Li, X. Ou and X. Zhang, Chem. Commun., 2015, 51, 3383 DOI: 10.1039/C4CC09586C

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