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Issue 98, 2012
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Effect of redox proteins on the behavior of non-volatile memory

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Abstract

We demonstrated the memory effect of redox proteins in organic field-effect transistor (OFET) flash memory devices. Redox proteins include a heme structure, which has reversible redox reactions. These properties of the proteins could be successfully applied to the flash memory devices, which show a considerable memory window (∼11 V) and relatively good endurance properties (∼over 100 cycles).

Graphical abstract: Effect of redox proteins on the behavior of non-volatile memory

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Article information


Submitted
17 Aug 2012
Accepted
22 Oct 2012
First published
05 Nov 2012

Chem. Commun., 2012,48, 12008-12010
Article type
Communication

Effect of redox proteins on the behavior of non-volatile memory

J. H. Lee, S. C. Yew, J. Cho and Y. S. Kim, Chem. Commun., 2012, 48, 12008
DOI: 10.1039/C2CC35959F

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