Issue 48, 2012
From the journal:

Chemical Communications

High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire†

Youqiang Chen,*ab   Xinni Zhang,*ad   Qing Zhao,*c   Li He,c   Zhipeng Xied  and  Huatao Wange  

* Corresponding authors

a College of Physics Science, Qingdao University, Qingdao, P. R. China
E-mail: chen-yq06@mails.tsinghua.edu.cn, zhangxn06@mails.tsinghua.edu.cn

b Department of Chemistry, Tsinghua University, Beijing, P. R. China

c State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, P. R. China
E-mail: zhaoqing@pku.edu.cn

d State Key Lab of New Ceramics and Fine Processing, Tsinghua University, Beijing, P. R. China

e School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai, P. R. China

Abstract

For the first time, we fabricated p-type FETs using an individual heavily Al-doped α-Si3N4 NW with a single-crystal structure. The results show that despite a heavy Al-doping level, a typical device still exhibits high performance with an extremely high on/off ratio, 103, at Vds = −5 V.

Graphical abstract: High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire

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Article information

DOI
https://doi.org/10.1039/C2CC30583F
Article type
Communication
Submitted
26 Jan 2012
Accepted
21 Apr 2012
First published
23 Apr 2012

Chem. Commun., 2012,48, 6016-6018

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High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire

Y. Chen, X. Zhang, Q. Zhao, L. He, Z. Xie and H. Wang, Chem. Commun., 2012, 48, 6016 DOI: 10.1039/C2CC30583F

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