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Issue 34, 2009
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Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities

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Abstract

Liquid GeCl4 precursors have been employed to grow into one dimensional Ge nanowires (NWs) via a vapor–liquid–solid (VLS) process, in which Si, supplied as a form of liquid SiCl4, plays a critical role for the successful formation of Ge NWs.

Graphical abstract: Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities

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Publication details

The article was received on 28 Apr 2009, accepted on 25 Jun 2009 and first published on 17 Jul 2009


Article type: Communication
DOI: 10.1039/B908361H
Citation: Chem. Commun., 2009,0, 5124-5126
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    Growth of germanium nanowires using liquid GeCl4 as a precursor: the critical role of Si impurities

    H. J. Song, S. M. Yoon, H. Shin, H. Lim, C. Park and H. C. Choi, Chem. Commun., 2009, 0, 5124
    DOI: 10.1039/B908361H

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