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Issue 40, 2008
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Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

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Abstract

An atomic layer epitaxy technique was used to produce nanoscale 2.9–3.4 nm copper particles supported on silica, and the nanoscale Cu/SiO2catalysts can show surprisingly high activity for the water gas shift reaction, in comparison with the 5.6 wt% Pt/SiO2 and 10.3 wt% Cu/SiO2 prepared by the impregnation method.

Graphical abstract: Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

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Article information


Submitted
01 May 2008
Accepted
31 Jul 2008
First published
09 Sep 2008

Chem. Commun., 2008, 4983-4985
Article type
Communication

Low-temperature water gas shift reaction on Cu/SiO2 prepared by an atomic layer epitaxy technique

C. Chen, J. Lin and T. Lai, Chem. Commun., 2008, 4983
DOI: 10.1039/B807428C

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